5 Simulation Study of Organic Thin Film Transistor Configurations for Gas Analytes Sensing
Organic Thin-Film Transistors are simulated for gas sensing applications both in a single transistor and two-transistor configurations. Parallel and series combination of two transistors with different active organic materials are also simulated. Results of simulation are compared with the experiment. The combined transistor in parallel and series configurations gave a better performance than single transistors in terms of gas analyte sensing. Drift-diffusion (DD) simulation model is used in which the basic equations used are similar to those used for a single-crystal device except that traps and defects are included in the model. It is assumed that traps due to grain boundaries are uniformly distributed throughout the film. Both exponential and Gaussian trap distributions are introduced in the simulation. Gas sensing is accounted for by doping dependent mobility model in the organic active material. Interface traps and charges at the interface between the polymer channel and gate insulator are incorporated. The density of doping in the polymer and the number of traps and interface charges are extracted by matching the simulation I-V curves with the experiment. Parameters extracted from simulations show good agreement with that of the experiment.